Recently, nanometer size semiconductors have been a topic of great interest. Chemical etching of silicon produce P-Si layers have a strong link between the details of processing and the optical and electronic properties of the resulting structure. This paper focuses on investigation the affecting of etching time on the, etching rate, electrical properties of Psi layer and photovoltaic properties of PSi/Si solar cell. Good photovoltaic (PV) properties (the fill factor (FF) 0.77,  η 28%) was obtain with 80 seconds etching time.