A limited area, to which ZnO nanoparticles are selectively adhered, is called a domain. Formation of the domain was controlled by using a coaxial gas-flow Ar/O₂ pulse plasma. The mechanism of the domain formation was closely related to initial surface condition of Si substrate. Especially, cleaning process was crucial. Here, a patterning of the domain was employed by using a fine mesh as a template. Linear patterning was also established. The formation processes were estimated by SEM and EDX. The technique developed here will be applied to a selective nanoparticle patterning.
Keywords: Zinc Oxide; Nanoparticle Patterning; Pulse Plasma;